cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 1/ 9 MTD07A04DH8 cystek product specification dual n-channel enhancement mode power mosfet MTD07A04DH8 bv dss 40v i d @v gs =10v, t c =25 c 40a i d @v gs =10v, t c =100 c 25.3a 9a i d @v gs =10v, t a =25 c 7.2a i d @v gs =10v, t a =70 c features r ds(on) @v gs =10v, i d =17a 6.7m (typ) ? low on resistance r ds(on) @v gs =4.5v, i d =10a 8.7m (typ) ? simple drive requirement ? low gate charge ? fast switching characteristic ? pb-free lead plating and halogen-free package equivalent circuit outline dfn5 6 MTD07A04DH8 pin 1 ordering information device package shipping MTD07A04DH8-0-t6-g dfn 5 6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 2/ 9 MTD07A04DH8 cystek product specification absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 40 gate-source voltage v gs 20 v continuous drain current @t c =25 c, v gs =10v (note 1) 40 continuous drain current @t c =100 c, v gs =10v (note 1) i d 25.3 continuous drain current @t a =25 c, v gs =10v (note 2) 9 continuous drain current @t a =70 c, v gs =10v (note 2) i dsm 7.2 pulsed drain current @ v gs =10v (note 3) i dm 160 avalanche current (note 3) i as 20 a single pulse avalanche energy @ l=0.5mh, i d =20amps, v dd =50v (note 5) e as 100 repetitive avalanche energy (note 3) e ar 3.1 mj t c =25 c (note 1) 31 t c =100 c (note 1) p d 12.4 t a =25 c (note 2) 1.5 power dissipation t a =70 c (note 2) p dsm 0.96 w operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 4 thermal resistance, junction-to-ambient, max (note 4) r ja 85 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the value in any given application depe nds on the user?s specific board design. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. 3 . ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4. when mounted on 1 in2 copper pad of fr-4 board ; 125 c/w when mounted on minimum copper pad. 5. 100% tested by conditions of l=0.5mh, i as =12a, v gs =10v, v dd =25v. characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.03 - v/ c reference to 25 c, i d =250 a v gs(th) 1.5 - 2.5 v v ds = v gs , i d =250 a *g fs - 24 - s v ds =5v, i d =17a i gss - - 2 100 na v gs = 2 20v - - 1 v ds =40v, v gs =0v i dss - - 25 a v ds =40v, v gs =0v, tj=125 c
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 3/ 9 MTD07A04DH8 cystek product specification - 6.7 9.3 v gs =10v, i d =17a *r ds(on) - 8.7 13.8 m v gs =4.5v, i d =10a dynamic *qg - 29.4 44.1 *qgs - 6.5 - *qgd - 7.3 - nc v ds =20v, i d =16a, v gs =10v *t d(on) - 15.6 24 *tr - 19.6 30 *t d(off) - 49.6 75 *t f - 12.4 19 ns v ds =20v, i d =1a, v gs =10v, r g =6 ciss - 1514 1895 coss - 188 235 crss - 119 150 pf v gs =0v, v ds =20v, f=1mhz rg - 1.7 - f=1mhz source-drain diode *i s - - 40 *i sm - - 160 a *v sd - 0.83 1.1 v i s =17a, v gs =0v *trr - 14.3 - ns *qrr - 9.2 - nc v gs =0, i f =10a, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 4/ 9 MTD07A04DH8 cystek product specification typical characteristics typical output characteristics 0 30 60 90 120 150 0246810 v ds , drain-source voltage(v) i d , drain current(a) 10 v 9v 8v 7v v gs =5v v gs =6v v gs =4.5v v gs =4v v gs =3.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 024681 0 0 tj=25c tj=150c drain-source on-state resistance vs junction tempearture 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =17a r ds( on) @tj=25c : 6.7m typ v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =17a
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 5/ 9 MTD07A04DH8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c os ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =20v i d =16a maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s r ds( on) limited t c =25c, tj=150, v gs =10v r jc =4c/w, single pulse 1s maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =4c/w
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 6/ 9 MTD07A04DH8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 30 60 90 120 150 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 500 1000 1500 2000 2500 3000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c r jc =4c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =4 c/w
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 7/ 9 MTD07A04DH8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 8/ 9 MTD07A04DH8 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c140h8 issued date : 2016.01.18 revised date : page no. : 9/ 9 MTD07A04DH8 cystek product specification dfn5 6 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.80 1.00 0.031 0.039 e 5.70 5.90 0.224 0.232 a1 0.00 0.05 0.000 0.002 e 1.27 bsc 0.050 bsc b 0.35 0.49 0.014 0.019 h 5.95 6.20 0.234 0.244 c 0.254 ref 0.010 ref l1 0.10 0.18 0.004 0.007 d 4.90 5.10 0.193 0.201 g 0.60 ref 0.024 ref f 1.60 ref 0.063 ref k 1.60 ref 0.063 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-l ge ead power pak plastic packa stek package code: h cy 8 date code device name 8-lead dfn5 6 plastic package d07a 04d cys package code : h8
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